Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs

The drain current of the amorphous InGaZnO thin-film transistors (TFTs) shows the Arrhenius and the nonArrhenius dependence at the high temperature and the low temperature respectively. The gate-voltagedependent effective temperature is introduced into the Arrhenius equation. Considering the normal MeyerNeldel (MN) rule and the inverse MN rule, the equation successfully describes both the Arrhenius and the non-Arrhenius dependent drain current at the low and the high gate voltage. The calculated results of the equation are verified by the available experimental data of the amorphous La-doped InZnO TFT and the amorphous InGaZnO (InO3:Ga2O3:ZnO = 1:1:1 mol%) TFT.

Automated summary

The drain current of amorphous InGaZnO thin-film transistors shows Arrhenius and non-Arrhenius dependencies at different temperatures, with the gate-voltage-dependent effective temperature introduced in the Arrhenius equation. The equation successfully explains the drain current behavior at low and high gate voltages by considering both the normal and inverse MeyerNeldel rules. Calculated results are verified by experimental data of amorphous La-doped InZnO TFT and amorphous InGaZnO TFT.