Proton irradiation induced GaAs solar cell performance degradation simulations using a physics-based model

In this study a recently developed physics-based model to describe the performance degradation of GaAs solar cells upon electron irradiation is applied to analyze the effects of proton irradiation. For this purpose GaAs solar cells with significantly different architectures are subjected to a range of proton irradiation fluences up to 5x 10(12) H+/cm(2). The resulting J V and EQE characteristics of the cells are measured and compared with the simulations from the model. The model requires individual degradation constants for the SRH lifetimes and the surface recombination velocities as an input. In this study these constants were obtained from the recently determined associated constants for electron irradiation using the particles non-ionizing energy loss (NIEL) values for conversion. The good fit between the simulated and experimentally obtained results demonstrate that this is a valid approach. Moreover, it suggests that the physics based model allows for a good prediction of GaAs cell performance under particle irradiation of any kind independent of the particular cell architecture as long as the layer thicknesses and doping levels are known. In addition the applied proton irradiation levels in this study were not found to induce additional Cu-related degradation in the investigated thin-film cells, indicating that the use of copper foil as a convenient carrier and rear contact does not require reconsideration for thin-film cells intended for space applications.

Automated summary

This study applies a physics-based model to analyze the effects of proton irradiation on GaAs solar cells, showing that the model provides a good prediction of cell performance under particle irradiation of any kind.