4.4 Article

Comparative performance analysis of mixed halide perovskite solar cells with different transport layers and back metal contacts

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IOP Publishing Ltd
DOI: 10.1088/1361-6641/abf46c

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mixed halide perovskites; SCAPS 1D tool; modeling; performance analysis

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In this study, SCAPS-1D software is utilized to model and analyze the performance of various perovskite solar cells (PSCs) with different back contact metals, electron transport layers, and hole transport layers combined with diverse mixed halide perovskite absorber materials. The optimum properties and defect densities of the absorber layers under different configurations have been determined for enhanced efficiency and stability of the devices.
In this study, SCAPS-1D software is used to model and analyze the performance of various perovskite solar cells (PSCs) with diverse back contact metals, electron transport layers and hole transport layers combined with different mixed halide perovskite absorber materials CH3NH3PbI3-X Cl (X) and CH3NH3PbI3-X Br (X) for X = 1, 2. With CH3NH3PbI3-X Cl (X) as the absorber layer, the best performance is obtained for the configuration glass/fluorine-doped tin oxide (FTO)/indium gallium zinc oxide (IGZO)/CH3NH3PbI3-X Cl (X) /CuSbS2/Au for X = 1 with a fill factor (FF) of 61.83% and a power conversion efficiency of 13.31%. The device configuration glass/FTO/IGZO/CH3NH3PbI3-X Br (X) /CuO/Pd for X = 1 shows the best performance with a power conversion efficiency of 15.55% and FF of 71.19% for CH3NH3PbI3-X Cl (X) as the absorber layer. The study shows that the optimum total defect density values of the absorber layer, MAPbI(3-X )Cl (X) with X = 1 and X = 2 are 2.5 x 10(13) cm(-3) and 2.5 x 10(14) cm(-3), respectively. For the MAPbI(3-X )Br (X) absorber layer, with X = 1 and 2, the optimum defect density is found to be 1 x 10(15) cm(-3). The optimum dopant concentration is found to be 1.0 x 10(18) cm(-3)and 1.0 x 10(16) cm(-3), respectively, for PSCs with MAPbI(3-X )Cl(X) as the absorber layer, for X = 1 and 2. For PSCs with MAPbI(3-X )Br (X) as an absorber layer with X = 1 and 2, the optimum dopant density is found to be 1.0 x 10(16) cm(-3) each. The device is found to be stable at an operating temperature of 300 K.

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