Dual-active-layer InGaZnO high-voltage thin-film transistors

InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 mu m is 406 +/- 17 V while the ON/OFF ratio reaches 10(9) at V-DS = 10 V.

Automated summary

InGaZnO high-voltage thin-film transistors (HV-TFTs) with a vertical dual-active-layer structure and lateral offset design have been fabricated at low temperature. These HV-TFTs exhibit characteristics similar to normal devices, with a high blocking voltage and a large ON/OFF ratio.