期刊
SCIENCE
卷 372, 期 6538, 页码 195-+出版社
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.abf5825
关键词
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资金
- National Key R&D Program of China [2018YFA0306900, 2017YFA0206301]
- Beijing Natural Science Foundation [4182028]
- China Postdoctoral Science Foundation [2020TQ0015]
- Key Research Program of Frontier Sciences, CAS [ZDBS-LY-JSC015]
- National Natural Science Foundation of China [61521004, 11974024]
- Strategic Priority Research Program of the Chinese Academy of Science [XDB33000000]
The study presents a method for synthesizing wafer-scale single-crystalline 2H MoTe2 semiconductors on an amorphous insulating substrate, with excellent uniformity and 100% device yield. The 2D single-crystalline film can serve as a template for further rapid epitaxy in a vertical manner.
The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe2) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe2 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe2 single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.
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