期刊
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS
卷 67, 期 2, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.pcrysgrow.2021.100522
关键词
Hexagonal boron nitride; Epitaxy; 2D materials; Wide band gap semiconductor; Crystal growth; Thin film growth; Van der Waals heterostructures; Physical vapor deposition; Chemical vapor deposition
Hexagonal boron nitride (h-BN) is a wide band gap material with multiple functionalities, making it important for various applications in the field of two-dimensional crystals and their van der Waals heterostructures. Controlled synthesis of h-BN has been making progress, and it shows great potential for future applications in different technologies.
Hexagonal boron nitride (h-BN) is a wide band gap layered material that is promising for a plethora of applications ranging from neutron detection to quantum information processing. Moreover, it has become highly relevant in the field of two-dimensional crystals and their van der Waals heterostructures due to its multiple functionality as substrate, encapsulation layer, tunneling barrier, or dielectric layer in various device schemes. Hence, controlled synthesis of h-BN has been intensively pursued aiming at its future implementation into different technologies. Herein, recent progress in growth of h-BN, either as bulk crystals or large-area thin films with thicknesses varying from tens of micrometers down to a single atomic layer, is reviewed. A general description of the main methods utilized including their technical aspects is presented in conjunction with the discussion of the material properties determined using well-established characterization tools. Also the main challenges and application prospects of each growth approach are addressed.
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