期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 15, 期 5, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.202100086
关键词
antiferroelectric-like behavior; electric field– induced crystallization; ferroelectric properties; hafnium oxide
资金
- German Bundesministerium fur Wirtschaft (BMWi)
- State of Saxony
- European Union [783176]
- Important Project of Common European Interest (IPCEI)
- Projekt DEAL
Ferroelectric hafnium oxide is a promising material for integrated devices due to its large spontaneous polarization, with the discovery of electric field-induced crystallization and differences in wake-up behavior providing insights into physical mechanisms. Clear procedures have been established for experimental quantification and preparation of hafnium oxide phases for different wake-up types.
Ferroelectric hafnium oxide (HfO2) is considered a very prospective material for applications in integrated devices due to its considerably large spontaneous polarization and superior thickness scaling. In fact, the evolution of the ferroelectric hysteresis upon field cycling plays an important role in most applications; especially the so-called wake-up effect that describes the increase of remanent polarization for initial field cycling, needs a profound understanding in HfO2. Herein, the discovery of electric field-induced crystallization in hafnium oxide is reported. In addition, differences in the wake-up behavior are addressed that finally can be categorized into five different cases, all being relevant when describing the evolution of ferroelectricity. Moreover, analysis of the temperature dependence and transmission Kikuchi diffraction provides insight into the underlying physical mechanisms of different wake-up behavior scenarios, and proves ferroelastic switching as the origin for the observed antiferroelectric-like behavior. This knowledge provides clear procedures of 1) how to experimentally quantify and 2) how to prepare and manufacture hafnium oxide phases for the five different wake-up types.
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