期刊
PHYSICA B-CONDENSED MATTER
卷 609, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.physb.2021.412893
关键词
Graphene CVD; Magnetoresistance; Weak localization; Hall effect
资金
- Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), Brazil
- Fundacao de Amparo a Pesquisa do Estado do Rio Grande do Sul (FAPERGS), Brazil, under the joint program PRONEX [16/0490-0]
- Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior (CAPES), Brazil
Chlorination of single-layer CVD graphene leads to strong hole doping and weak-localization effects due to intrinsic disorder in the as-grown system and chlorination process. The theoretically predicted negative magnetoresistance regime is observed in freshly chlorinated samples. Time-dependent effects in the electrical transport properties of functionalized CVD graphene samples are also observed as adsorbed chlorine is gradually lost.
We report on electrical resistivity, magnetoresistance, and Hall-effect experiments in single-layer CVD graphene submitted to photochlorination. The resistivity and the ordinary Hall effect reveal a strong hole doping due to Cl adsorption. Intrinsic disorder of the as-grown system as well as that produced in the chlorination process lead to weak-localization effects, observed in the low-temperature magnetoresistance. The theoretically predicted regime where intervalley scattering fully restores the usual negative magnetoresistance is observed in a freshly chlorinated sample. Also observed are time-dependent effects in the electrical transport properties of the functionalized CVD-graphene samples due to a progressive loss of adsorbed Cl.
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