期刊
OPTIK
卷 232, 期 -, 页码 -出版社
ELSEVIER GMBH
DOI: 10.1016/j.ijleo.2021.166598
关键词
Organic component; Schottky diode; Electrical characteristics; Methylene blue; Barrier height; Ideality factor; Interface states density
类别
The electrical properties of Au/methylene blue/silicon/aluminum diode were studied through I-V measurements, showing that the diode exhibits different current-voltage characteristics at different temperatures and can be used in optoelectronic applications.
Current-voltage (I-V) measurements of Au/methylene blue (MB)/p-Si/Al diode were taken at room temperature, in the dark and under illumination and also in a wide temperature range (100-360 K). Schottky diode showed non-ideal current-voltage behavior at 360 K and 100 K with ideality factors (n) equal to 1.81-1.46 and 3.52-2.73, respectively, using TE and Cheung methods. Experimental barrier height (phi(b)) values of the diode were determined as 0.29 eV for TE, 0.33 eV for Cheung and 0.38 eV for Norde at 100 K, and 0.79, 0.81, and 0.87 eV at 360 K, respectively. Series resistance (R-s) was found with the help of Cheung functions and Norde functions. The results show that the produced diode can be used in a variety of optoelectronic applications.
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