Investigation of InGaN-based red/green micro-light-emitting diodes

We investigated the performance of InGaN-based red/green micro-light-emitting diodes (mu LEDs) ranging from 98 x 98 mu m(2) to 17 x 17 mu m(2). The average forward voltage at 10 A/cm(2) was independent of the dimension of mu LEDs. Red mu LEDs exhibited a larger blueshift of the peak wavelength (similar to 35 nm) and broader full-width at half maximum (>= 50 nm) at 2-50 A/cm(2) compared to green mu LEDs. We demonstrated that 47 x 47 mu m(2) red mu LEDs had an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

The study found that the forward voltage of InGaN-based red/green micro-light-emitting diodes was independent of the dimension, red LEDs exhibited a larger blueshift of peak wavelength and broader full-width at half maximum compared to green LEDs. The 47x47 μm² red LEDs showed an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard.