期刊
OPTICS AND LASER TECHNOLOGY
卷 136, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2020.106696
关键词
Thinned WS2 nanosheets; Multiphoton absorption; Nonlinear optical properties; Photoluminescence emission
资金
- CoE (Advanced Materials)
- MHRD (TEQIP-III), NIT, Durgapur
- DST-FIST
- Department of Science & Technology and Biotechnology, Govt. of West Bengal [332(Sanc.)/ST/P/ST/16G-24/2018]
- UGC CAS-II [F.530/20/CAS-II/2018(SAP-I)]
- DST-PURSE Phase-2 programmes, Govt. of India [SR/PURSE Phase 2/34]
The Z-scan technique was used to investigate the nonlinear optical properties of multi-layered WS2 nanosheets. It was found that a transformation from saturable absorption (SA) to reverse saturation absorption (RSA) occurs in trilayer WNSs. Additionally, the transition from one photon absorption (1PA) to two-photon absorption (2PA) only happens in trilayer WNSs with the increase of laser intensity.
By employing the Z-scan technique, the nonlinear optical (NLO) properties of multi-layered WS2 nanosheets (WNSs) are investigated using pulsed (10 ns) laser irradiation having wavelength of 532 nm. In the trilayer WNSs, the transformation from saturable absorption (SA) to reverse saturation absorption (RSA) is clearly observed only when the magnitude of incident pump intensity exceeds 0.68 GW/cm(2). The saturation intensity in the case of SA for the used sample is found to be similar to 0.53 +/- 0.03 GW/cm(2). The SA behaviour appears at low intensity due to one photon absorption (1PA) originated from the direct transition at B excitonic peak. This is confirmed from the measured photoluminescence properties of trilayer WNSs. Further, with the increase of laser intensity, the transformation of 1PA to two-photon absorption (2PA) occurs only for trilayer WNSs. It is observed that at the highest used intensity of 0.93 GW/cm(2), trilayer WNSs exhibits a large 2PA. A comprehensive analysis of the experimental data of Z-scan enables us to determine a value of similar to 1.42 +/- 0.01 cm/GW for the highest 2PA coefficient (beta(2PA)) and this value is similar to 1.5 times higher than those obtained for the multilayer and penta-layer WNSs. The calculated value of the imaginary part of the third-order NLO susceptibility (Im chi((3))) of the trilayer WNSs is similar to 4.24 x 10( )(-13)esu. The properties of transition from SA to RSA in thinned layered of WNSs make these materials favourable for designing different optoelectronic devices.
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