期刊
NANOTECHNOLOGY
卷 32, 期 33, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/abfee7
关键词
Ag nanoparticles; pulsed laser-induced dewetting; thermal dewetting; fingering instability; solid-state dewetting; liquid-state dewetting
资金
- Natural Sciences and Engineering Research Council (NSERC) of Canada
- Alberta Advanced Education
This study systematically explored two different methods for dewetting of silver thin films, PLiD and TD, and found that both methods can produce silver NPs of similar size, with PLiD showing better size uniformity for thinner films. On the other hand, TD produced larger silver NPs for thicker films.
Two different dewetting methods, namely pulsed laser-induced dewetting (PLiD)-a liquid-state dewetting process and thermal dewetting (TD)-a solid-state dewetting process, have been systematically explored for Ag thin films (1.9-19.8 nm) on Si substrates for the fabrication of Ag nanoparticles (NPs) and the understanding of dewetting mechanisms. The effect of laser fluence and irradiation time in PLiD and temperature and duration in TD were investigated. A comparison of the produced Ag NP size distributions using the two methods of PLiD and TD has shown that both produce Ag NPs of similar size with better size uniformity for thinner films (<6 nm), whereas TD produced bigger Ag NPs for thicker films (>= 8-10 nm) as compared to PLiD. As the film thickness increases, the Ag NP size distributions from both PLiD and TD show a deviation from the unimodal distributions, leading to a bimodal distribution. The PLiD process is governed by the mechanism of nucleation and growth of holes due to the formation of many nano-islands from the Volmer-Weber growth of thin films during the sputtering process. The investigation of thickness-dependent NP size in TD leads to the understanding of void initiation due to pore nucleation at the film-substrate interface. Furthermore, the linear dependence of NP size on thickness in TD provides direct evidence of fingering instability, which leads to the branched growth of voids.
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