Observation of Electric-Field-Induced Structural Dislocations in a Ferroelectric Oxide

Dislocations are 1D topological defects with emergent electronic properties. Their low dimensionality and unique properties make them excellent candidates for innovative device concepts, ranging from dislocation-based neuro-morphic memory to light emission from diodes. To date, dislocations are created in materials during synthesis via strain fields or flash sintering or retrospectively via deformation, for example, (nano)-indentation, limiting the technological possibilities. In this work, we demonstrate the creation of dislocations in the ferroelectric semiconductor Er(Mn,Ti)O-3 with nanoscale spatial precision using electric fields. By combining high-resolution imaging techniques and density functional theory calculations, direct images of the dislocations are collected, and their impact on the local electric transport behavior is studied. Our approach enables local property control via dislocations without the need for external macroscopic strain fields, expanding the application opportunities into the realm of electric-field-driven phenomena.

Automated summary

This study demonstrates the creation of dislocations with nanoscale spatial precision in a ferroelectric semiconductor using electric fields, allowing for local property control without the need for external macroscopic strain fields. The impact of dislocations on local electric transport behavior is studied through high-resolution imaging techniques and density functional theory calculations.