Inversion-Symmetry Engineering in Layered Oxide Thin Films

Inversion-symmetry breaking is a ubiquitous concept in condensed-matter science: It is a prerequisite for technologically relevant effects such as piezoelectricity, nonlinear optical properties, and spin-transport phenomena. It also determines abstract properties, like the electronic topology in quantum materials. Therefore, the creation of materials where inversion symmetry can be turned on or off by design may be a versatile approach for controlling parity-related functionalities. Here, we engineer inversion symmetry on a sub-unit-cell level in ultrathin hexagonal manganite films. Although an odd number of half-unit-cell layers breaks inversion symmetry, an even number of such layers remains centrosymmetric. Optical second harmonic generation as an inversion-symmetry-sensitive functionality is thus activated and deactivated on demand and at the same time used for in situ tracking of the symmetry state of our films. Symmetry engineering on the sub-unit-cell level thus suggests a new platform for controlled activation and deactivation of symmetry-governed functionalities in oxide-electronic epitaxial thin films.

Automated summary

In this study, inversion symmetry is engineered on a sub-unit-cell level in ultrathin hexagonal manganite films. By controlling the number of layers, optical second harmonic generation, a symmetry-sensitive functionality, can be activated and deactivated, providing a new platform for controlling symmetry-governed functionalities in oxide-electronic epitaxial thin films.