期刊
NANO LETTERS
卷 21, 期 9, 页码 3929-3934出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c00555
关键词
Two-dimensional materials; Transition metal dichalcogenides; Hexagonal boron nitride; Resonant tunneling; Negative differential resistance
类别
资金
- CREST, Japan Science and Technology Agency (JST) [JPMJCR15F3, JPMJCR20B4, JPMJCR16F2]
- PRESTO-JST [JPMJPR20L5]
- JSPS KAKENHI [JP19H02542, JP19H01820, JP20H00127, JP20H00354]
- Moritani Scholarship Foundation
- Murata Science Foundation
Few-layer transition metal dichalcogenides exhibit subband quantization and can be utilized for infrared optoelectronics applications.
Few-layer transition metal dichalcogenides (TMDs) exhibit out-of-plane wave function confinement with subband quantization. This phenomenon is totally absent in monolayer crystals and is regarded as resulting from a naturally existing van der Waals quantum-well state. Because the energy separation between the subbands corresponds to the infrared wavelength range, few-layer TMDs are attractive for their potential to facilitate the application of TMD semiconductors as infrared photodetectors and emitters. Here, we report a few-layer WSe2/h-BN tunnel barrier/multilayer p(+)-MoS2 tunnel junction to access the quantized subbands of few-layer WSe2 via tunneling spectroscopy measurements. Resonant tunneling and a negative differential resistance were observed when the top of the valence band F-point of p(+)-MoS2 was energetically aligned with one of the empty subbands at the Gamma-point of few-layer WSe2. These results demonstrate a critical step toward the utilization of subband quantization in few-layer TMD materials for infrared optoelectronics applications.
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