期刊
MOLECULES
卷 26, 期 6, 页码 -出版社
MDPI
DOI: 10.3390/molecules26061670
关键词
perovskite quantum dots; light-emitting diodes; solution process; hole transporting layer
资金
- National Natural Science Foundation of China [51873159]
- Fundamental Research Funds for the Central Universities of China [2042019kf0234]
- Open Project Program of Wuhan National Laboratory for Optoelectronics [2019WNLOKF015]
- Open Fund of Guangdong Provincial Key Laboratory of Luminescence from Molecular Aggregates, South China University of Technology [2019B030301003]
PQDs have low-conductive ligands and defects in devices, requiring careful management of charge injection and transport for optimal electroluminescent performances. This study found that doping p-dopants into the hole transporting layer can improve electroluminescent performances in LED devices, with F4-TCNQ showing a 27% improvement in peak external quantum efficiency. Capacitance and transient electroluminescent measurements were used to analyze interactions in the doped HTL and at the interface between the HTL and PQDs.
Perovskite quantum dots (PQDs) have drawn global attention in recent years and have been used in a range of semiconductor devices, especially for light-emitting diodes (LEDs). However, because of the nature of low-conductive ligands of PQDs and surface and bulk defects in the devices, charge injection and transport should be carefully managed in order to maximize the electroluminescent performances. In this study, we employed three p-dopants, i.e., 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), 1,3,4,5,7,8-hexafluoro-11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (F6-TCNNQ), and 11,11,12,12-tetracyanonaphtho-2,6-quinodimethane (TCNH14), respectively doped into the commonly used hole transporting layer (HTL) poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). Compared with the devices with the neat PTAA, those with the doped PTAA as the HTLs achieved the improved electroluminescent performances. In particular, the device with the strong oxidant F4-TCNQ exhibited an improvement factor of 27% in the peak external quantum efficiency compared with the control device with the neat PTAA. The capacitance and transient electroluminescent measurements were carried out to identify the imperceptible interactions in the doped HTL and at the interface between the HTL and PQDs.
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