N-SrTiO3/p-GaN heterojunctions: A white light-emitting diode with a broad luminescence spectrum

We report a white light-emitting diode (LED) based on the n-SrTiO3 (n-STO)/p-GaN heterojunction. The n-STO/p-GaN heterojunction LED shows the good rectification characteristics in the current voltage measurements and an intense white light emission with a broad luminescence spectrum in electroluminescence (EL) measurements. There are two strong and broad emission bands at the regions from blue to red (450-650 nm, center located at similar to 525 nm) and from ultraviolet to blue (350-450 nm, center located at similar to 410 nm), which are respectively derived from the p-type GaN and n-type STO layers. The photoluminescence (PL) spectra indicate that the n-STO film has an emission band from ultraviolet (UV) to blue which is associated with the near band-edge emission and defect-related radiative recombination, and the p-GaN layer has an emission band from blue to red. Our results suggest that n-STO/p-GaN heterojunction is an alternate and effective heterostructure to achieve LEDs with high intense white light emission.

Automated summary

A white light-emitting diode (LED) based on the n-SrTiO3 (n-STO)/p-GaN heterojunction demonstrates good rectification characteristics and intense white light emission. The device exhibits strong and broad emission bands in both blue to red and ultraviolet to blue regions, originating from the p-type GaN and n-type STO layers respectively. This heterojunction structure shows promise for achieving LEDs with high intense white light emission.