4.6 Article

Laser-assisted doping of graphene for transparent conducting electrodes

期刊

MATERIALS CHEMISTRY AND PHYSICS
卷 263, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2021.124348

关键词

MW-SWP-CVD graphene; Doping; AuCl3; Laser irradiation; Sheet resistance; Network wrinkles

资金

  1. New Energy and Industrial Technology Development Organization (NEDO) Japan [17102103-0]
  2. Japan Society for the Promotion of Science (JSPS)

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In this study, laser irradiation was used to control the doping process of directly grown graphene, leading to the collection of gold particles on graphene network wrinkles which significantly enhance the electrical properties of graphene. This approach shows promise in designing transparent conductive electrodes for optoelectronic devices.
In this work, we study the role of laser irradiation in the control of the doping processing for directly grown graphene using microwave surface wave plasma chemical vapor deposition (MW-SWP-CVD) on the glass substrates. Raman spectrum and X-ray photoelectron spectroscopy (XPS) were used to investigate the evolution of the structure of doping graphene as a function of laser irradiation. Also, the effect of laser on the morphology for doping graphene using AuCl3 was observed by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), and optical microscope techniques. The gold particles were collected on graphene network wrinkles, which were resulted from laser irradiation. These gold network wrinkles were further used to enhance the electrical properties of the graphene, resulting in a significant reduction in sheet resistance and an improvement of its stability after storage in ambient air. The presented approach paves the way to design promising transparent conductive electrodes for optoelectronic devices such as light-emitting diodes (LED), photodiodes and solar cells.

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