One-dimensional weak antilocalization effect in 1T′-MoTe2 nanowires grown by chemical vapor deposition

We present a chemical vapor deposition method for the synthesizing of single-crystal 1T '-MoTe2 nanowires and the observation of one-dimensional weak antilocalization effect in 1T '-MoTe2 nanowires for the first time. The diameters of the 1T '-MoTe2 nanowires can be controlled by changing the flux of H-2/Ar carrier gas. Spherical-aberration-corrected transmission electron microscopy, selected area electron diffraction and energy dispersive x-ray spectroscopy (EDS) reveal the 1T ' phase and the atomic ratio of Te/Mo closing to 2:1. The resistivity of 1T '-MoTe2 nanowires shows metallic behavior and agrees well with the Fermi liquid theory (<20 K). The coherence length extracted from 1D Hikami-Larkin-Nagaoka model with the presence of strong spin-orbit coupling is proportional to T (-0.36), indicating a Nyquist electron-electron interaction dephasing mechanism at one dimension. These results provide a feasible way to prepare one-dimensional topological materials and is promising for fundamental study of the transport properties.

Automated summary

A chemical vapor deposition method is presented for synthesizing single-crystal 1T'-MoTe2 nanowires and observing the one-dimensional weak antilocalization effect for the first time. The diameters of the nanowires can be controlled by changing the gas flux, and the resistivity shows metallic behavior in agreement with Fermi liquid theory. The study provides insights into electron-electron interaction dephasing mechanisms in one dimension and demonstrates the potential for preparing one-dimensional topological materials.