Magnetoelectric control of antiferromagnetic domain state in Cr2O3 thin film

Magnetoelectric (ME) effect is a type of cross-coupling between unconjugated physical quantities, such as the interplay between magnetization and electric field. The ME effect requires simultaneous breaking of spatial and time inversion symmetries, and it sometimes appears in specific antiferromagnetic (AFM) insulators. In recent years, there has been a growing interest for applying the ME effect to spintronic devices, where the effect is utilized as an input method for the digital information. In this article, we review the recent progress of this scheme mainly based on our own achievements. We particularly focus on several fundamental issues, including the ME control of the AFM domain state, which is detectable through the perpendicular exchange bias polarity. The progress made in understanding the switching mechanism, interpretation of the switching energy, switching dynamics, and finally, the future prospects are included.

Automated summary

The magnetoelectric (ME) effect involves a cross-coupling between unconjugated physical quantities, such as magnetization and electric field, often appearing in specific antiferromagnetic (AFM) insulators. There is a growing interest in using the ME effect for spintronic devices, where it serves as an input method for digital information. Research focuses on issues such as controlling the AFM domain state and understanding the switching mechanism and dynamics.