Controlled lateral epitaxial growth in vertical β-Ga2O3 nanowires on sapphire by MOCVD

Lateral epitaxial growth in vertical beta-Ga2O3 nanowires was studied on sapphire substrates via metal organic chemical vapor deposition by controlling growth temperature and O-2 flow rate. The lateral epitaxial growth rate of beta-Ga2O3 rise up with increasing growth temperature and decreasing O-2 flow rate, which are related to reaction kinetics and parasitic reaction, respectively. In addition, a growth model is proposed to explain the morphology of nanowires when growth condition changes. These results can provide important guidance on addressing slow coalescence rate of beta-Ga2O3 nuclear islands on heterogeneous substrates and open new doors to beta-Ga2O3 optoelectronic and electronic devices on cost-effective foreign substrates.

Automated summary

By controlling the growth temperature and O-2 flow rate, the lateral epitaxial growth rate of beta-Ga2O3 nanowires can be increased, which is related to reaction kinetics and parasitic reactions. Additionally, a growth model proposed in the study helps explain the morphology changes of nanowires under different growth conditions.