Ultrafast carrier response of CH3NH3PbI3/MoO3/graphene heterostructure for terahertz waves

Ultrafast carrier response of perovskite/MoO3/graphene heterostructure was investigated by optical-pump terahertz (THz) probe spectroscopy. The high work function of MoO3 changes the tunable graphene Fermi level via hole doping. Compared with monolayer graphene, it generates a more negative photoconductivity and enables ultra-fast THz functional manipulation. The subsequent THz signal decrease is related to hot-carrier cooling and the carrier concentration contributed by the CH3NH3PbI3 layer. The charge transfer and recombination reduce the positive conductance of the hybrid structure relative to that of neat CH3NH3PbI3.

Automated summary

The ultrafast carrier response of the perovskite/MoO3/graphene heterostructure was studied using optical-pump terahertz (THz) probe spectroscopy. The high work function of MoO3 changes the tunable graphene Fermi level through hole doping, leading to more negative photoconductivity and enabling ultra-fast THz functional manipulation. Subsequent THz signal decrease is related to hot-carrier cooling and carrier concentration from the CH3NH3PbI3 layer, reducing the positive conductance of the hybrid structure compared to neat CH3NH3PbI3.