期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 125, 期 19, 页码 10759-10767出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.1c02029
关键词
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资金
- Scientific Research Foundation of the Graduate School of Southeast University [YBPY2024]
- Fundamental Research Funds for the Central Universities [2242017K41009, 2242018K41021]
- Science and Technology Support Program of Jiangsu Province [BE2018117]
The penetration growth of a ZnS shell on CdZnSeS/ZnS alloy core/shell quantum dots improves the multiexciton property of the dots, but further shell growth can lead to interface defects deterioration. Quantum dots with a three-monolayer ZnS shell demonstrate the best performance.
The effect of surface/interface defects on multiexciton recombination is studied with CdZnSeS/ZnS alloy core/ shell quantum dots (QDs) with different shell thicknesses. Through pump-power-related time-resolved photoluminescence/ amplified-spontaneous-emission (ASE) spectra and statistical analysis of single-dot fluorescence, it is indicated that with the epitaxial growth of the ZnS shell, the multiexciton property of the QDs can be improved due to surface passivation, but with further shell growth, interface defects caused by stress accumulation will result in deterioration. The QDs with three monolayers ZnS shell show the best performance with a biexciton quantum yield of 11.6%, biexciton lifetime of similar to 360 ps, and ASE threshold of only 118 mu J cm(-2), with which a vertical cavity surface-emitting laser is fabricated. Our experimental results highlight the importance of surface/interfacial defects to the application of QDs on laser devices.
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