Thermal stability of amorphous metal chalcogenide thin films

Amorphous metal chalcogenides have good switching properties for resistive memories, but have low thermal stability. In this work, the response to rapid thermal stress, as high as 550 degrees C, of amorphous Cu-GeSe, Ag-GeSe, Cu-GeTe, Ag-GeTe thin films, is investigated. Metal-GeTe films, which are amorphous up to 280 degrees C, are the most stable. Metal-GeSe films start to crystallize at 190 degrees C and a Cu1.59Se phase, with 20.5% Cu vacancies and a structure similar to the c-Cu2-xSe superionic conductor, is formed. This might boost the performance of memory devices. Silver atoms migration is facilitated in Ag-GeSe by poor crystallization (below 5%, at all temperatures). Difussion of Ag is enhanced in Ag-GeTe, due to the crystallization of the cubic (Ag2Te)(4)-GeTe2 (Ag8GeTe6) phase, which has Ag+ vacancies. In Cu-GeTe, the formation of stoichiometric polycrystalline Cu0.67Ge0.33 Te might hinder diffusion. An unusual anisotropic behaviour (increase in thickness, simultaneously with contraction of surface) is observed at 100 degrees C in Cu-GeSe and Cu-GeTe thin films, which suggests the orientation of the amorphous clusters package along a preferential direction.

Automated summary

Amorphous metal chalcogenides show good switching properties for resistive memories, with metal-GeTe films exhibiting the highest thermal stability and metal-GeSe films beginning to crystallize at 190 degrees Celsius. Silver atom migration is hindered in Ag-GeSe due to poor crystallization, while diffusion of silver is enhanced in Ag-GeTe.