The effect of Cu2O layer on characteristic properties of n-CdS/p-Cu2O heterojunction

In this work, the heterojunctions were designed using p-Cu2O and n-CdS thin films. These films were sequentially deposited on microscope glass substrates via chemical bath deposition method (CBD). In order to investigate the effect of Cu2O thin films on the characteristic properties of n-CdS/p-Cu2O heterojunction, we were focused on the production of Cu2O thin films by using two different amounts of Cu such as 0.05 g and 0.06 g in experimental processes. The structural, morphological, optical and electrical properties of the present heterojunctions were investigated by x-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), UV-Vis optical spectrophotometer, and resistivity measurement, respectively. According to present results, the XRD patterns and FESEM images of FE-1 and FE-2 heterojunctions had different the preferential orientation and surface morphology. The change in the sheet resistance of the heterojunction in the CO gas environment was examined to determine whether the structure should be used as a gas sensor. Energy band gap values of FE-1 and FE-2 heterojunctions were estimated 2.19 and 1.93 eV, respectively. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

This study focused on the design of heterojunctions using p-Cu2O and n-CdS thin films, investigating the effect of Cu2O thin films on the properties of the heterojunction. Structural, morphological, optical, and electrical properties were examined using various analytical techniques to understand the characteristics of the heterojunction.