Spin-polarized gate-tuned transport property of a four-terminal MoS2 device: a theoretical study

The transport property of a four-terminal MoS2NR/V-7(Bz)(8) device is computed within the framework of density functional theory combined with the nonequilibrium Green's function (NEGF) technique. This device is constructed by a MoS2 nanoribbon (MoS2NR) as the source-to-drain channel and a spin-polarized V-7(Bz)(8) nanowire grafted on the MoS2NR surface as the double gate channel, where the four terminals are all connected to a semi-infinite one-dimensional (1D) Au lead. The transport characteristic is explored by investigating the conductance, currents, local density of states (LDOS), and scattering states. The currents of different leads are dissimilar due to the complex interplay between the four terminals that is otherwise not present in a two-terminal setup. The most interesting feature we articulate is that the induced promising properties including negative differential resistance (NDR) behavior, input/output current switching, as well as spin-polarized lead currents can be fine-tuned by the magnitude of either source bias or gate bias. These features can be utilized in designing multi-terminal nanoelectronic devices.

Automated summary

The transport property of a four-terminal MoS2NR/V-7(Bz)(8) device was investigated using density functional theory and NEGF technique. The interaction between the four terminals led to dissimilar currents in different leads, and the promising properties including NDR behavior and spin-polarized lead currents could be fine-tuned by adjusting the source bias or gate bias magnitude, which can be useful in designing multi-terminal nanoelectronic devices.