Regulation of vertical and biaxial strain on electronic and optical properties of G-GaN-G sandwich heterostructure

Recently, the two-dimensional heterostructure is a research hot spot of semiconductor materials, and it has wide application prospects in electronic devices and photocatalysis. In this work, we constructed novel graphene-GaN-graphene (G-GaN-G) sandwich heterostructure, and the electronic and optical properties have been theoretically investigated based on the first principles calculations. The computation results indicate that the heterostructure is most stable when interlayer distance d(0) is 3.189 angstrom, and electronic and optical properties of intrinsic GaN and graphene are well preserved. In addition, the effect of vertical and biaxial strain on the G-GaN-G heterostructure is also investigated, we find that strain can effectively regulate the electronic and optical properties. Therefore, the electronic and optical properties of G-GaN-G can be tuned by applying different levels of strain to meet the needs of devices. This study results reveal that the G-GaN-G sandwich heterostructure can be hopefully applied to ultraviolet photodetectors and optoelectronic devices.

Automated summary

A novel graphene-GaN-graphene sandwich heterostructure was constructed and theoretically investigated for its electronic and optical properties. It was found that strain can effectively regulate these properties, potentially enabling tailored applications in devices. The study suggests promising prospects for the application of the G-GaN-G heterostructure in ultraviolet photodetectors and optoelectronic devices.