相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Growth of bulk GaN crystals
R. Kucharski et al.
JOURNAL OF APPLIED PHYSICS (2020)
Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
Geoffrey M. Foster et al.
APPLIED PHYSICS LETTERS (2020)
Commercial GaN-Based Power Electronic Systems: A Review
Bejoy N. Pushpakaran et al.
JOURNAL OF ELECTRONIC MATERIALS (2020)
A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes
Mona A. Ebrish et al.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING (2020)
Long range, non-destructive characterization of GaN substrates for power devices
J. C. Gallagher et al.
JOURNAL OF CRYSTAL GROWTH (2019)
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
J. K. Hite et al.
JOURNAL OF CRYSTAL GROWTH (2018)
Effect of Surface Morphology on Diode Performance in Vertical GaN Schottky Diodes
J. K. Hite et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Effect of Surface Passivation and Substrate on Proton Irradiated AlGaN/GaN HEMT Transport Properties
J. C. Gallagher et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2017)
Defects in Single Crystalline Ammonothermal Gallium Nitride
Sami Suihkonen et al.
ADVANCED ELECTRONIC MATERIALS (2017)
On the Radiation Tolerance of AlGaN/GaN HEMTs
B. D. Weaver et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2016)
Vertical Power p-n Diodes Based on Bulk GaN
Isik C. Kizilyalli et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Radiation Effects in GaN-Based High Electron Mobility Transistors
S. J. Pearton et al.
JOM (2015)
Reliability studies of vertical GaN devices based on bulk GaN substrates
Isik C. Kizilyalli et al.
MICROELECTRONICS RELIABILITY (2015)
Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation
Travis J. Anderson et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
Andrew D. Koehler et al.
IEEE ELECTRON DEVICE LETTERS (2013)
High Quality, Low Cost Ammonothermal Bulk GaN Substrates
Dirk Ehrentraut et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions
R. E. Stahlbush et al.
APPLIED PHYSICS LETTERS (2009)
Homoepitaxy on bulk ammonothermal GaN
R. Dwilinski et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Accurate dependence of gallium nitride thermal conductivity on dislocation density
C. Mion et al.
APPLIED PHYSICS LETTERS (2006)