期刊
JOURNAL OF CHEMICAL PHYSICS
卷 154, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/5.0046338
关键词
-
资金
- National Natural Science Foundation of China [11674152, 11681240276]
- Guangdong Innovative and Entrepreneurial Research Team Program [2016ZT06D348]
- Natural Science Foundation of Guangdong Province [2017B030308003]
- Science, Technology and Innovation Commission of Shenzhen Municipality [ZDSYS201703031659262]
- Advanced Talents Incubation Program of Hebei University [521000981390]
Through density-functional theory calculations, this study investigates the interlayer interaction between metal and few-layer MoS2, proposing phase-engineering and intercalation doping as methods to improve contact performance, both of which can tune the Schottky barrier height.
Due to Fermi-level pinning in metal-two-dimensional MoS2 junctions, improving the performance of MoS2-based electrical devices is still under extensive study. The device performance of few-layer MoS2 depends strongly on the number of layers. In this work, via density-functional theory calculations, a comprehensive understanding from the atomistic view was reached for the interlayer interaction between metal and few-layer MoS2 with phase-engineering and intercalation doping, which are helpful for improving the contact performance. These two methods are probed to tune the performance of few-layer MoS2-based field-effect transistors, and both of them can tune the Schottky barrier height. Phase-engineering, which means that the MoS2 layer in contact with metal is converted to the T phase, can transform the Schottky barrier from n- to p-type. Intercalation doping, which takes advantage of annealing and results in metal atom interaction in between MoS2 layers, makes the MoS2 layers become quasi-freestanding and converts the indirect bandgap into direct bandgap. Our atomistic insights help improve the performance of few-layer MoS2-based electronic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据