Hydrogen density-of-states distribution in β-Ga2O3

Hydrogen bonding in beta-Ga2O2 is investigated using hydrogen effusion measurements. The samples were grown by plasma-assisted pulsed laser deposition. With increasing deposition temperature, the total H concentration decreases from 8.1x10(19) to 9.2x10(18)cm(-3). The dependence of the hydrogen chemical potential, mu(H), on the H concentration is derived from the effusion spectra and subsequently used to determine the H density-of-states distribution. beta-Ga2O2 deposited at T-dep <= 723K exhibits a needle-like peak in the H density-of-states distribution at approximate to 1.8eV below the H transport states. With increasing T-dep, the H density-of-states changes and two broad peaks emerge that are located at approximate to 1.7 and 2.4eV below the H transport states for T-dep >= 873K.

Automated summary

The hydrogen bonding in beta-Ga2O2 was investigated through hydrogen effusion measurements, showing a decrease in total H concentration with increasing deposition temperature. The hydrogen density-of-states distribution changes with deposition temperature, exhibiting different peaks at varying energy levels below the H transport states.