The energy-storage performance and dielectric properties of (0.94-x) BNT-0.06BT-xST thin films prepared by sol-gel method

Lead-free (0.94-x)Bi0.5Na0.5TiO3-0.06BaTiO(3-x)SrTiO(3) (abbreviated as BNT-BT-xST, x = 0, 0.05, 0.10, 0.15, 0.20) thin films were grown onto the Pt/Ti/SiO2/Si substrate via a sol-gel/spin-coating method. Effect of Sr introduction on the microstructures, dielectric properties and energy-storage density of the thin films was researched. As a consequence, the addition of ST enhanced the maximum polarization and dielectric constant of the thin films. BNT-BT-0.055T thin film existed high maximum recoverable energy-storage densigty (U-e) 22.5 J/cm(3), dielectric constant 1120 and low dielectric loss about 0.04 at 1 kHz. Moreover, the thin films showed excellent dielectric temperature stability at the measured temperature range among 25-200 degrees C. These results indicated that BNT-BT-0.055T thin film can be a promising candidate for lead-free energy storage capacitor. (C) 2020 Published by Elsevier B.V.

Automated summary

By controlling the amount of SrTiO3 introduced into the BNT-BT thin films, the maximum polarization and dielectric properties of the films can be enhanced, leading to high energy-storage density and low dielectric loss under certain conditions.