Existence of bipolar and unipolar resistive switching in CaZrO3 thin film device

Resistive Random Memory (RRAM) effect has been investigated in Pt/CaZrO3/Pt/Si thin-film device, which is demonstrated bipolar resistive switching (BRS) and unipolar resistive switching (URS) phenomenon. BRS has a wide voltage window to SET and RESET the device during the repetition of the cycle. In the URS measurement, the device was SET at a lower voltage window and RESET to a higher voltage window. The resistance ratio (R-HRS/R-LRS) is approximate to 10(2) in BRS and 10(3) in URS, respectively. It revealed a good retention time approximate to 10(3) s and approximate to 10(4) s in BRS and URS, respectively, to retain the data. During URS measurement, the device was SET and RESET at a compliance current of 5 mu A and 1 mA, respectively. Poole-Frenkel (P-F) and Schottky emission (S-E) conduction mechanisms provide unrealistic dielectric constant. SCLC conduction mechanism has been dominated in the phenomenon of resistive switching. Formation and rupturing of thin conducting filament depend upon the migration of oxygen vacancies and oxygen ions. This device illustrates BRS and URS phenomenon and low compliance current, which may be suitable for nonvolatile memories. (C) 2020 Elsevier B.V. All rights reserved.

Automated summary

The resistive random memory effect has been investigated in Pt/CaZrO3/Pt/Si thin-film device, demonstrating bipolar and unipolar resistive switching phenomena. The device exhibits good retention time and low compliance current in both BRS and URS, making it suitable for nonvolatile memories.