Innovative Infrared-pulsed laser assisted RF sputtered β-Ga2O3 thin film at low temperature process

Innovative new method for the pulsed laser assisted radio-frequency sputtering at low temperature process was successfully applied for the beta phase Ga2O3 thin film as wide band gap materials. Thin film of wide bandgap material, beta-Ga2O3, was successfully deposited on SiO2/Si and quartz substrates by employing radiofrequency sputtering system with assisting process of ytterbium-laser irradiation. Both sputtering system and infrared pulsed laser irradiation process were employed at the same time to increase the acquired energy densities for the adatoms on the thin film growth process. X-ray diffraction patterns (XRD) showed the prominent peaks of unique crystalline properties of Ga2O3 thin films in beta phase. The optical energy bandgap of Ga2O3 thin films derived from spectral transmittance was measured in the range of 4.90-5.06 eV for a variation of laser power. High resolution X-ray photon spectroscopy (XPS) analysis showed that O 1s and Ga 3d position in core level. We confirm that infrared optical energy was effectively added to fabricate beta-Ga2O3 thin film by employing the Yb-laser-assisted RF sputtering process. (c) 2021 Elsevier B.V. All rights reserved.

Automated summary

A novel method was successfully applied to deposit Ga2O3 thin film as wide band gap material, utilizing radiofrequency sputtering system and ytterbium-laser irradiation to enhance energy density. Unique crystalline properties and optical energy bandgap were observed, confirming the effectiveness of infrared optical energy in fabricating beta-Ga2O3 thin film.