期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 60, 期 SB, 页码 -出版社
IOP Publishing Ltd
DOI: 10.35848/1347-4065/abef15
关键词
AlScN; Ferroelectric thin-film; Thickness scaling
资金
- Center for the Semiconductor Technology Research from The Featured Areas Research Center Program within Ministry of Education (MOE) in Taiwan
- Ministry of Science and Technology, Taiwan [MOST 109-2634-F-009-029]
The study reveals the significant impact of thickness on the ferroelectric properties of Al0.78Sc0.22N films, with a gradual degradation of remnant polarization below 35 nm. Switching cycle tests show a wake-up effect in the films, especially for thick films.
Thickness scaling on ferroelectric properties of sputter-deposited poling-free Al0.78Sc0.22N films has been examined. The c-axis oriented films were confirmed by X-ray rocking curve measurements with a film as thin as 10 nm. Ferroelectric-type hysteresis and poling-free behaviors are observed from the capacitance measurements, even with a thickness of 20 nm. The remnant polarization (P-r) shows a gradual degradation when the thickness is less than 35 nm. The switching (SW) cycle test reveals a wake-up effect for the film, especially for thick films of over 35 nm. A longer SW cycle of over 10(5) times can be obtained with thinner Al0.78Sc0.22N films around 20 nm at the cost of P-r.
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