4.3 Article

On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films

期刊

JAPANESE JOURNAL OF APPLIED PHYSICS
卷 60, 期 SB, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.35848/1347-4065/abef15

关键词

AlScN; Ferroelectric thin-film; Thickness scaling

资金

  1. Center for the Semiconductor Technology Research from The Featured Areas Research Center Program within Ministry of Education (MOE) in Taiwan
  2. Ministry of Science and Technology, Taiwan [MOST 109-2634-F-009-029]

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The study reveals the significant impact of thickness on the ferroelectric properties of Al0.78Sc0.22N films, with a gradual degradation of remnant polarization below 35 nm. Switching cycle tests show a wake-up effect in the films, especially for thick films.
Thickness scaling on ferroelectric properties of sputter-deposited poling-free Al0.78Sc0.22N films has been examined. The c-axis oriented films were confirmed by X-ray rocking curve measurements with a film as thin as 10 nm. Ferroelectric-type hysteresis and poling-free behaviors are observed from the capacitance measurements, even with a thickness of 20 nm. The remnant polarization (P-r) shows a gradual degradation when the thickness is less than 35 nm. The switching (SW) cycle test reveals a wake-up effect for the film, especially for thick films of over 35 nm. A longer SW cycle of over 10(5) times can be obtained with thinner Al0.78Sc0.22N films around 20 nm at the cost of P-r.

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