4.2 Article

Determination of Rare Impurities in High-Purity Germanium and Germanium Oxide by Inductively Coupled Plasma Atomic Emission Spectrometry

期刊

INORGANIC MATERIALS
卷 57, 期 4, 页码 409-416

出版社

MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0020168521040051

关键词

semiconductor germanium; internal standard; impurity preconcentration

资金

  1. [0236-2021-0002]

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A combination of techniques for quantitative chemical analysis of high-purity germanium and germanium oxide has been proposed, allowing determination of various elements with detection limits ranging from n x 10(-6) to n x 10(-5) wt %. The techniques utilize internal standards to account for the effect of germanium on analytical signals, and a combined technique is introduced to lower detection limits for specific elements.
We have proposed a combination of techniques for quantitative chemical analysis of high-purity germanium and germanium oxide by inductively coupled plasma atomic emission spectrometry. The techniques are intended for determination of the rare-earth (RE) elements (except Pm), platinum group metals (PGMs) (except Os), I, S, Th, Tl, and U after acid dissolution of a sample (instrumental technique) and after separation of the matrix in the form of a highly volatile compound (combined technique). The instrumental technique allows all of the above elements to be determined. To take into account the effect of germanium on analytical signals of analytes, use is made of Be, Dy, or Gd internal standards. The best results in spike experiments have been obtained for the RE elements, PGMs, and I with the Be 234.861 nm; for Th, Tl, and U with the Dy 353.170 nm; and for S with no internal standards. The analyte detection limits (DLs) lie in the range n x 10(-6) to n x 10(-5) wt %. The combined technique is intended for lowering the DLs for Ir, Pd, Pt, Rh, Ru, S, Th, Tl, and U. Germanium was removed from weighed samples of germanium metal and germanium dioxide in the form of GeCl4 to above 99.99%. The analyte DLs were then from n x 10(-7) to n x 10(-6) wt %.

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