Enhanced photoluminescence property of porous silicon treated with bismuth (III)

This work focuses on the impact of Bismuth (Bi) solution treatment on the optical properties of p-type porous silicon prepared by electrochemical anodization. Bi-layers of variable thickness are incorporated in porous silicon via a dip coating technique. The changes in the structural and optical properties of Bi (III)/PS nanostructures are monitored by Atomic Force Microscopy, Fourier transform infrared measurements and photoluminescence spectroscopy. These analyses highlight a relevant impact of the deposition process, which modifies the intrinsic properties of the porous silicon by the incorporation of Bi (III) in its pores. It is found that ultra-thin films of bismuth oxide formed after a heat treatment in air at 400 degrees C and deposited on PS samples leads to its stability as well as to passivating its dangling bands. For thicknesses ranging from 6 to 20 nm, the photoluminescence property in the visible region of Bi/PS nanostructures has been improved. This may be of interest for various optoelectronic applications.

Automated summary

This study focuses on the impact of Bismuth solution treatment on the optical properties of p-type porous silicon. By incorporating Bi layers of variable thickness in porous silicon, the photoluminescence property in the visible region has been improved. This finding could be significant for various optoelectronic applications.