期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 68, 期 5, 页码 850-856出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2021.3071963
关键词
Sensitivity; Voltage measurement; Ions; SPICE; Single event upsets; Radiation effects; Clocks; Bipolar gain; body biasing; single-event effects (SEEs); SPICE; TCAD; ultra-thin body and box (UTBB) fully depleted silicon on insulator (FD-SOI); voltage scaling
资金
- STMicroelectronics
- University of Aix-Marseille
This article explores the effects of voltage scaling and forward body biasing on the single-event effect sensitivity of 28-nm UTBB FD-SOI technology. Results show consistent SEU sensitivity but reduced SET sensitivity. Simulation analysis suggests that bipolar amplification plays a crucial role in sensitivity at low LETs.
In this article, we present the effects of voltage scaling and forward body biasing (FBB) on single-event effect sensitivity of a 28-nm ultra-thin body and box (UTBB) fully depleted silicon on insulator (FD-SOI) technology. Heavy-ion irradiation was performed for single-event upset (SEU) and single-event transient (SET) sensitivity assessment on characterization test chips under three supply voltages, with and without back-gate voltage application. Measurements show a steady SEU sensitivity for any supply voltage across the two FBB configurations, whereas SET sensitivity is diminished under FBB. SPICE and TCAD mixed-mode simulations were run to assess the contribution of electrical factors as well as charge extraction mechanisms. While drive strength is increased under FBB, the bipolar amplification plays an important role in sensitivity at low linear energy transfers (LETs).
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