期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 68, 期 4, 页码 458-462出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2021.3067726
关键词
Annealing; cadmium compounds; current-voltage characteristics; materials testing; semiconductor detectors
资金
- Special Fund for Basic Scientific Research of Central Colleges of Chang'an University [300102318106, 300102310105]
- Major Project of International Scientific and Technological Cooperation Plan in Shaanxi [2020KWZ-008]
- Natural Science Basic Research Plan in Shaanxi Province of China [2020JM-245]
- Undergraduate Training Programs for Innovation and Entrepreneurship of Chang'an University [S202010710201]
The study demonstrates that hydrogen treatment can significantly enhance the electrical properties of CdMnTe:In crystals, leading to improved resistivity, reduced carrier concentration, enhanced mobility, and ultimately better energy resolution and detector performance.
The effects of hydrogen treatment on electrical properties of detector-grade cadmium manganese telluride (CdMnTe:In) crystals were investigated. The results showed that the resistivity of the crystals was improved from 10(9) to 10(10) Omega.cm after annealing. With the increase of annealing time, the resistivity first increased and then decreased. Hydrogen passivation reduced the carrier concentration and enhanced mobility. The disappearance of A1 phonon mode of Te in Raman spectroscopy suggested that Te was decreased in crystal surface. The energy resolution and mobility-lifetime product of CdMnTe detectors were significantly improved. The CdMnTe:In crystal annealed for 30-h hydrogen treatment with greatest energy resolution and highest (mu tau)(e) value had the best detector performance.
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