4.6 Article

Numerical Simulation: Design of High-Efficiency Planar p-n Homojunction Perovskite Solar Cells

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 68, 期 5, 页码 2360-2364

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2021.3066454

关键词

CZTSSe; photovoltaic cells; simulation; thin film

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Perovskite-based planar homojunction solar cells show higher efficiency and performance advantages, reducing recombination losses through the built-in electric field. Simulation analysis reveals that device performance depends on the thickness and defects of the perovskite layer, with interface defects influencing performance. By designing homojunction devices with perovskite, higher efficiencies have been achieved.
Perovskite-based solar cells with planar configuration have been perceived as an alternative and attractive option for photovoltaic technology due to high power conversion efficiency (PCE). The performance of heterojunction-based devices is hindered by the recombination in the perovskite layers. The homojunction is suitable for further improvement in PCE due to the built-in electric field, which will enhance the transport of photogenerated charge carriers, therefore, reducing recombination losses. A detailed analysis of the homojunction-based device is needed for further improvement in PCE. In this study, the planarhomojunction perovskite photovoltaic device has been simulatedby solar cell capacitancesimulator (SCAPS). Simulation analysis shows the dependence of PCE on the thickness and defects of the perovskite layer. Recombination analysis at the different junctions has been simulated using hypothetical interface layers at the respective junctions. It has been revealed that the interface defects influence the device performance. The proposed MAPbI(3) homojunction-based devices have achievedmore than 23% PCE, which is significantly higher than the existing planar heterojunction-based devices.

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