Realizing High-Performance β-Ga2O3 MOSFET by Using Variation of Lateral Doping: A TCAD Study

In this article, for the first time, a variation of lateral doping (VLD) technique was proposed to improve blocking voltage and ON-resistance properties in the lateral beta-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET). Enhancement-mode operation was achieved in the VLD transistor. The maximum transconductance of this new device is more than three times as large as the uniformly doped (UD) transistor. Moreover, the OFF-state electric field at the channel was suppressed compared to the UD transistor, resulting in higher blocking voltage. We also investigated the optimal device properties with changing channel concentration in the drift region of VLD transistor. A power figure of merit of 332.7 MW/cm(2) was reached by VLD design. Thus, this proposed structure provides a new design strategy for high-power beta-Ga2O3 MOSFETs.

Automated summary

A variation of lateral doping (VLD) technique was proposed to enhance blocking voltage and ON-resistance properties in lateral beta-Ga2O3 MOSFET, achieving enhancement-mode operation and significantly higher transconductance compared to uniformly doped (UD) transistor. The design also resulted in suppressed OFF-state electric field and higher blocking voltage, with a power figure of merit reaching 332.7 MW/cm(2). This new structure offers a new design strategy for high-power beta-Ga2O3 MOSFETs.