Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier

Integration of an enhancement-mode (E-mode) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with a high-performance lateral Schottky barrier controlled Schottky (LSBS) rectifier in a compact layout is fabricated on an ultrathin-barrier AlGaN/GaN heterostructure grown on Si substrate. The state-of-the-art reverse conduction voltage (V-rev) of 0.455 V was achieved in the monolithic integrated E-mode power device with a threshold voltage of 1.55 V. V-rev exhibited a tiny temperature variation of 0.66% from 0 degrees C to 150 degrees C compared with that of 157% for the controlled E-mode HEMT.

Automated summary

By integrating an enhancement-mode metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with a high-performance lateral Schottky barrier controlled Schottky (LSBS) rectifier on an ultrathin-barrier AlGaN/GaN heterostructure grown on a Si substrate, a monolithic integrated E-mode power device with a state-of-the-art reverse conduction voltage of 0.455 V and a threshold voltage of 1.55 V was achieved, showing a small temperature variation of 0.66% from 0 degrees C to 150 degrees C.