期刊
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
卷 68, 期 3, 页码 1183-1192出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSI.2020.3047484
关键词
Equalizer; interference; 3D NAND; flash; compensation; characterization
资金
- National Research Foundation of Korea [2019R1I1A2A02061135]
- SK hynix
- National Research Foundation of Korea [2019R1I1A2A02061135] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Inter-cell interference in commercial three-dimensional NAND flash memory was characterized, showing that four neighboring cells play a significant role in exerting interference on a victim cell. The total amount of interference in 3D NAND was found to be fairly significant, with proper compensation able to significantly reduce the number of errors.
We characterize inter-cell interference in commercial three-dimensional NAND flash memory. By writing random data into 3D NAND and collecting sample means and sample variances of cell values corresponding to a particular set of input values in fixed relative neighboring cell locations, it is shown that the interference coming from any target cell locations can be measured. We observe that four neighboring cells, two along the same pipe and two along the same bit line, are responsible for most of the interference exerted on a given victim cell. Contrary to the general belief, the total amount of interference is found to be fairly significant even in 3D NAND; if compensated properly, the number of errors can be reduced significantly.
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