期刊
IEEE ELECTRON DEVICE LETTERS
卷 42, 期 4, 页码 485-488出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3062851
关键词
Ga2O3; NiOX; PN junction; heterojunction; junction FET; power figure of merit
资金
- NSFC [62004147]
This study demonstrates the achievement of high-performance beta-Ga2O3 power devices by incorporating p-type NiOX. The p-n heterojunction diodes and gate field-effect-transistors both show state-of-the-art power figure of merit, providing insights for the development of Ga2O3 power devices.
We report on achieving high-performance beta-Ga2O3 power devices through the incorporation of the p-type NiOX .beta-Ga2O3 p-n heterojunction (HJ) diodes, as well as the novel p-n HJ gate (G) field-effect-transistors (HJ-FETs), have all demonstrated state-of-the-art Baliga's power figure of merit (P-FOM). The HJ p-n diode is introduced to provide a large built-in potential and alleviate the peak electric field to enhance the By. The non-field plated p-n HJ diode and HJ-FET acquire a breakdown voltage (BV)/specific on-resistance (R-on,R-sp) of 1220 V/1.08 m Omega . cm(2) and 1115 V/3.19 m Omega . cm(2), respectively. Therefore, the P-FOM which is defined as the BV2 /R on , sp is yielded to be 1.38 GW/cm(2) and 0.39 GW/cm(2) for p-n HJ diode and HJ-FET, respectively. Due to the hard realization of p-type Ga2O3, these findings show significant insights on the development of Ga2O3 power devices and offer great promises of implementing p-NiOx in boosting the Ga2O3 power device performances.
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