Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer

In this letter, we demonstrate a high-performance lateral AIGaN/GaN Schottky barrier diode (SBD) using an 80-nm thick GaN cap layer as the passivation layer and a low work-function tungsten (W) layer as the anode. A low turn-on voltage (V-ON) of 0.38 V and a high breakdown voltage of 2.08 kV are obtained at the same time. Additionally, the normalized dynamic on-resistance (R-ON,R-dyn) becomes only a factor of 1.13 higher than the static on-resistance (R-ON) after a 10-s-long bias test at 900 V. Also owing to the impressively stability of R-ON,R-dyn and V-ON under long-duration stress, these lateral GaN SBDs with a thick GaN cap layer show a great potential for the next-generation of power electronic devices.

Automated summary

This letter demonstrates a high-performance lateral AIGaN/GaN Schottky barrier diode featuring low turn-on voltage and high breakdown voltage, achieved by using a low work-function tungsten layer and a thick GaN cap layer. The device shows impressive stability in dynamic on-resistance and turn-on voltage under long-duration stress tests, indicating great potential for next-generation power electronic devices.