One-Volt, Solution-Processed InZnO Thin-Film Transistors

In this letter, we report solution-processed, high-performance Indium-Zinc-Oxide (IZO) thin-film transistors (TFTs). The annealing temperature of IZO films are studied and found that devices annealed at 350 degrees C exhibit the best performance. With the use of a thin AlxOy layer as the gate dielectric, one-volt IZO TFTs are demonstrated, showing a high current on/off ratio of > 10(5), a high mobility over 10 cm(2)/Vs, and a low subthreshold swing (SS) of 83 mV/dec, which is fairly close to the theoretical limit of SS at 300 K. Such a high device performance is also found comparable to those deposited using vacuum-based methods. As a result, the presented devices might possess a great potential in low-cost, low-power electronics.

Automated summary

The study showed that IZO films annealed at 350 degrees Celsius exhibit the best performance, and with the use of a thin AlxOy layer as the gate dielectric, high-performance IZO TFTs were demonstrated. These devices have a high current on/off ratio, high mobility, and are close to the theoretical limit of subthreshold swing.