期刊
IEEE ELECTRON DEVICE LETTERS
卷 42, 期 5, 页码 677-680出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3068738
关键词
HEMTs; Gallium nitride; Substrates; Power generation; Strain; Silicon; Wide band gap semiconductors; Bendable; gallium nitride; high-electron-mobility-transistor; microwave
资金
- National Natural Science Foundation of China [61922021]
- Intelligent Terminal Key Laboratory of Sichuan Province [SCITLAB-0011]
- Sichuan Province Engineering Research Center for Broadband Microwave Circuit High Density Integration
This study proposes a fabrication method for a bendable GaN HEMT with state-of-the-art output power in the microwave band, grown on SiC substrates and transferred using a copper film. The fabricated devices exhibited a saturation output power of 2.65 W and maximum PAE of 51% at 3 GHz, indicating potential for high-power flexible RF electronics.
Flexible radio frequency (RF) devices are in high demand for wearable electronics; however, they currently do not offer sufficient output power for application in fifth-generation wireless communication systems. This paper reports a bendable gallium nitride (GaN) high-electron-mobility-transistor (HEMT) with state-of-the-art output power in the microwave band. In this study, a fabrication method is proposed, where HEMT is originally grown on silicon carbide (SiC) substrates. After thinning the SiC substrates down to 5 mu m, HEMT is transferred using a copper film rather than flexible substrates used in other studies. The measurements indicated that the fabricated devices exhibited a saturation output power of 2.65 W, corresponding to a power density of 2.65 W/mm, which was associated with maximum power added efficiency (PAE) of 51% at 3 GHz. The performance of the fabricated device remained stable even with a bending radius of up to 0.6 cm. These results indicated that the proposed fabrication method can potentially be used to realize high-power flexible RF electronics.
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