Amorphous ZrO2 Tunnel Junction Memristor With a Tunneling Electroresistance Ratio Above 400

An amorphous ZrO2 based tunneling junction memristor (TJM) with a tunneling electroresistance (TER) ratio above 400 is demonstrated. It is attributed to the modulation of tunneling barrier width induced by the accumulation of oxygen vacancies (V-O(+)) and negative charges near the ZrO2/semiconductor interface. The ferroelectric-like behaviors attributed to the voltage-modulated switching of the dipoles consisting of V-O(+) and negative charges in ZrO2 are characterized by a polarization-voltage test. The ZrO2 TJM achieves a TER ratio above 400 under 2.5/-1.5 V at 100 ns write/erase pulse condition, over 10(4) cycles program/erase endurance, and >10(4) s data retention.

Automated summary

An amorphous ZrO2 based tunneling junction memristor (TJM) demonstrated a tunneling electroresistance (TER) ratio above 400, attributed to the modulation of tunneling barrier width induced by the accumulation of oxygen vacancies (V-O+) and negative charges near the ZrO2/semiconductor interface. The ferroelectric-like behaviors characterized by a polarization-voltage test in ZrO2 TJM showed excellent performance under various conditions.