Enhanced Electrical Characteristics of Ge nMOSFET by Supercritical Fluid CO2 Treatment With H2O2Cosolvent

Significant improvements on Ge nMOSFET can be achieved by a novel low temperature supercritical phase fluid treatment with H2O2 cosolvent. Thanks to the reduction of oxygen vacancy and unstable oxidation states, devices with the proposed treatment exhibit a low equivalent oxide thickness of 0.67 nm, 2-order reduction on gate leakage current, 7 times improvement on on-current, very low subthreshold swing of 79 mV/dev, high on/off current ratio, small hysteresis of 43.3 mV, low interface trap density, excellent uniformity and reliability characteristics.

Automated summary

A novel low temperature supercritical phase fluid treatment with H₂O₂ cosolvent can lead to significant improvements on Ge nMOSFET by reducing oxygen vacancy and unstable oxidation states, resulting in a device with low equivalent oxide thickness, reduced gate leakage current, high on-current, very low subthreshold swing, high on/off current ratio, small hysteresis, low interface trap density, excellent uniformity, and reliability characteristics.