Demonstration of n-Ga2O3/p-GaN Diodes by Wet-Etching Lift-Off and Transfer-Print Technique

In this letter, a 400-nm-thick beta-Ga2O3 nanomembrane is extracted from an n-Ga2O3-on-silicon wafer by wet etching, and then transferred to a p-GaN/ sapphire wafer by transfer-print technique to fabricate n-Ga2O3/p-GaN heterojunction diodes. X-ray photoelectron spectroscopy (XPS) measurement is used to accurately confirm that the valence-band offset of the heterojunction is 1.41 +/- 0.07 eV. The diodes exhibit excellent electrical properties including high rectification ratio (3.85 x 10(5) at +/- 5 V) and low reversed current density (1.51 x 10(-7) A.cm(-2) at -5 V). The results show that the lift-off and transfer-print processes pave a new way for fabricating high-performance Ga2O3-based heterojunctions and bipolar devices.

Automated summary

In this study, a high-performance Ga2O3-based heterojunction diode was successfully fabricated using lift-off and transfer-print techniques. The diodes exhibited excellent electrical properties, indicating a new pathway for the fabrication of Ga2O3 heterojunctions and bipolar devices.