4.7 Article

Fracture surface analysis and quantitative characterization of gallium arsenide III-V semiconductors using fractography

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Engineering, Mechanical

Dynamic crack modeling and analytical stress field analysis in single-crystal silicon using quantitative fractography

Anthony Moulins et al.

THEORETICAL AND APPLIED FRACTURE MECHANICS (2020)

Article Engineering, Multidisciplinary

On dynamic surface instabilities of cracks in brittle crystals

Liron Ben-Bashat Bergman et al.

INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE (2019)

Article Energy & Fuels

Solar cell efficiency tables (Version 45)

Martin A. Green et al.

PROGRESS IN PHOTOVOLTAICS (2015)

Article Materials Science, Ceramics

Failure Analysis of Modern Silicon Dice

Roberto Dugnani et al.

INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY (2014)

Article Materials Science, Multidisciplinary

Nanoindentation cracking in gallium arsenide: Part I. In situ SEM nanoindentation

Kilian Wasmer et al.

JOURNAL OF MATERIALS RESEARCH (2013)

Article Materials Science, Multidisciplinary

Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Cedric Pouvreau et al.

JOURNAL OF MATERIALS RESEARCH (2013)

Article Materials Science, Ceramics

Flexural Strength by Fractography in Modern Brittle Materials

Roberto Dugnani et al.

JOURNAL OF THE AMERICAN CERAMIC SOCIETY (2013)

Article Materials Science, Multidisciplinary

Dynamic instabilities in {111} silicon

D. Sherman et al.

JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS (2008)

Article Multidisciplinary Sciences

Low-speed fracture instabilities in a brittle crystal

J. R. Kermode et al.

NATURE (2008)

Article Materials Science, Multidisciplinary

Mechanical properties of undoped GaAs. III: Indentation experiments

Shanling Wang et al.

ACTA MATERIALIA (2007)

Article Materials Science, Multidisciplinary

Hackle or textured mirror? Analysis of surface perturbation in single crystal silicon

D Sherman

JOURNAL OF MATERIALS SCIENCE (2003)

Article Chemistry, Physical

Shearing orientation dependence of cleavage step structures on GaAs(110)

T Okui et al.

SURFACE SCIENCE (2000)